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ELECTRICAL CHARACTERISTICS (TA=25¡æ and Ves=0 unless otherwise noted) | |||||||
SYMBOL | CHARACTERISTIC | 3N165 & 3N166 | LS3N165 & LS3N166 | UNITS | CONDITIONS | ||
MIN | MAX | MIN | MAX | ||||
IGs5R | Gate Reverse Leakage Current | 10 | 100 | pA | VGs=40V | ||
lcssF | Gate Forward Leakage Current | -10 | 100 | Vgs=-40V | |||
25 | TA=+125¡æ | ||||||
pss | Drain to Source Leakage Current | 200 | 200 | Vos=-20V,Vgs=Ves=0V | |||
IsDs | Source to Drain Leakage Current | 400 | 400 | Vso=-20V,VGp=VDB=0V | |||
D(on) | On Drain Current | -5 | 30 | -5 | -30 | mA | Vos=-15V VGs=-10V Vss=0V |
Vosoh | Gate Source Threshold Voltage | -2 | -5 | -2 | -5 | V | Vos=-15V lo=-10¦ÌA Vsg=0V |
VGsm | Gate Source Threshold Voltage | -2 | -5 | -2 | -5 | V | Vos=Vgs lo=-10¦ÌA Vsa=0V |
Ds(on | Drain Source ON Resistance | 300 | 300 | ohms | Vgs=-20V lo=-100¦ÌA Vsa=0V | ||
gis | ForwardTransconductance | 1500 | 3000 | 1500 | 3000 | ¦ÌS | Vos=-15V lo=-10mA f=1kHz Vse=0V |
gos | Output Admittance | 300 | 300 | ¦ÌS | |||
Cs | Input Capacitance | 3.0 | 3.0 | pF | Vos=-15V lo=-10mA f=1MHz (NOTE 3)Vsa=0V | ||
Css | Reverse Transfer Capacitance | 0.7 | 1.0 | ||||
Coss | Output Capacitance | 3.0 | 3.0 | ||||
RE(Ys) | Common Source Forward Transconductance | 1200 | ¦ÌS | Vos=-15V lo=-10mA f=100MHz (NOTE 3)Vsa=0V |
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